Insulated Gate Bipolar Transistor, 40A 1200V IGBT

• Customization: Available
• Certification: RoHS, CE, ISO, CCC
• Encapsulation Structure: Chip Transistor
• Model NO.: IGBT
• Installation: SMD Triode
• Working Frequency: Overclocking
• Power Level: High Power
• Function: Photosensitive, Darlington Tube, Power Triode, Switching Triode
• Structure: Diffusion
• Material: Silicon
• Operating Temperature Range: -40°c ~ +85°c
• Storage Temperature: -65°c ~ +150°c
• ESD Protection: ≥2000V
• Mtbf: >100000h
• Transport Package: /
• Specification: /
• Trademark: /
• Origin: /

Product Description

Model NO.	IHW20N120R3	Shipping by	DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post
Gate-Emitter Thr Voltage-Max	6.4V	Collector-Emitter Voltage-Max	1200V
Subcategory	Insulated Gate Bip Transistors	Description	IGBT 1200V 40A 310W
Power Dissipation-Max (ABS)	310W	Transistor Application	Power Control
Detailed Description	IGBT Trench Through Hole	Product Category	IGBT Transistors
Continuous Collector Current at 25 C	40 a	Packaging	Tube
Gate-Emitter Leakage Current	100 Na	Minimum Operating Temperature	- 40 C
Origin	China

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COMPLETE AFTER-SALES SYSTEM
According to the actual needs of customers, SHENGXIN can issue reports to prove preventive measures, etc., and can issue agent/original factory test reports according to the situation, you can issue third-party laboratory reports with legal effect. For SHENGXIN WEIYE, 20 years of service history, to provide customers with timely, fast and accurate service, has accumulated a wealth of experience and relevant knowledge. We know that only by carefully handling every emergency and controlling every detail can we effectively ensure safety.The interests of customers and companies can be better developed.

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